Global GaN Radio Frequency (RF) Devices Market to grow at a CAGR of 18.94% during the period 2016 - 2020; Finds New Report

Report forecast the global GaN radio frequency (RF) devices market to grow at a CAGR of 18.94% during the period 2016-2020.

Silicon has been the preferred choice for computing and electronic devices since its invention almost 50 years ago. However, the constant evolution of technology demands high power and ever greater enhancements in the core semiconductor materials to ensure high performance. GaN has superior properties than silicon such as high breakdown voltage and saturation velocity. The bandgap in GaN is almost thrice the bandgap of silicon. Thus, GaN has the ability to improve power conversion efficiencies, raise power density levels, extend battery lives, and accelerate switching speeds in different end-user segments such as consumer electronics products, telecommunications hardware, electric vehicles, or domestic appliances.

The report covers the present scenario and the growth prospects of the global GaN radio frequency (RF) devices market for 2016-2020. The report considers the use of GaN RF devices in different end-user segments such as cellular infrastructure (telecom towers, base stations, telecom infrastructure, and cellular networks); defense sector (military communications, radar, and electronic warfare); CATV (cable television dishes); and others (medical, satellite communications, broadband amplifiers, wired broadband, and ISM band applications).

The market is divided into the following segments based on geography:

• APAC
• Europe
• North America
• ROW

According to the report, emerging companies focusing on gallium-based compounds is a key driver aiding to the growth of this market. The silicon-based RF power semiconductor market is dominated by vendors such as Infineon Technologies and NXP Semiconductor. As a result of the domination of these global players in the semiconductor market, emerging companies such as MACOM are focusing more on GaN technology for RF power semiconductor devices. Though the gallium-based high-power RF semiconductor market is still in the nascent stage, commercialization is taking place. The benefits of GaN include wide bandgap and higher power, energy, and speeds in reaching higher energy states. In addition, the market hold of the leading vendors of the silicon-based RF power devices is not strong enough to prevent emerging companies from developing and using new technologies.

Further, the report states that scarcity of professionals for GaN semiconductor devices is a major challenge the market is facing. GaN-based semiconductors are new in the field of mass RF applications even though they have been used since 1990 in a series of small/limited applications. The technology was later used by the defense sector and was finally commercialized after 2010. GaN technology is a niche semiconductor technology. Therefore, the availability of skilled professionals in this field is not in line with the demand. A critical issue faced by the experts in this market is training professionals. It takes three to four years for a professional to be fully trained in the GaN-based semiconductor technology. In such a scenario, the attrition of trained professionals is also affecting the growth of the global GaN RF devices market.

Global GaN Radio Frequency (RF) Devices Market 2016-2020, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

key players in the global GaN radio frequency (RF) devices market: GAN Systems, Infineon Technologies, NXP Semiconductors, Qorvo, and Wolfspeed.

Other Prominent Vendors in the market are: Ampleon Netherlands B.V., Avago Technologies, Efficient Power Conversion (EPC), Fujitsu Semiconductor, INTEGRA Technologies, MACOM, Microsemi, Northrop Grumman, NTT Advanced Technology Corporation, RFHIC, Sumitomo Electric Device Innovations, ST-Ericsson, Texas Instruments, Toshiba, United Monolithic Semiconductors (UMS), and WIN Semiconductors.

Market driver

• Proliferation of next-generation LTE wireless networks
• For a full, detailed list, view our report

Market challenge

• Requirement for high investment
• For a full, detailed list, view our report

Market trend

• High adoption GaN power amplifiers
• For a full, detailed list, view our report

Key questions answered in this report

• What will the market size be in 2020 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?
• What are the market opportunities and threats faced by the key vendors?
• What are the strengths and weaknesses of the key vendors?

Spanning over 63 pages and 30 Exhibits “Global GaN Radio Frequency Devices Market 2016 - 2020” report covers Executive summary, Scope of the report, Market research methodology, Introduction, Market landscape, Technology landscape, Market segmentation by sector application, Geographical segmentation, Market drivers, Impact of drivers, Market challenges, Impact of drivers and challenges, Market trends, Vendor landscape.

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