Global Next Generation Memory Market to grow at a CAGR of 66.63% during the period 2017 - 2021; Finds New Report

Report forecast the global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.

Next-generation memories include the latest developments in the memory industry such as ferroelectric random-access memory (FeRAM), phase-change memory (PCM), resistive random-access memory (ReRAM), and magnetic random-access memory (MRAM). The MRAM segment includes spin-transfer torque random-access memory (STT-MRAM). Next-generation memories are usually nonvolatile in nature.

The report covers the present scenario and the growth prospects of the global next generation memory market for 2017-2021. To calculate the market size, the report considers revenue generated from the sales of nonvolatile memory (NVM) technologies implemented in the different application segments.

The market is divided into the following segments based on geography:

• Americas
• APAC
• EMEA

According to the report, one driver in market is low power consumption. Next-generation memory technologies are mostly used in battery-powered wireless sensors, as they consume approximately 50% less power than other flash memories. This increases the battery life, leading to a reduction in maintenance costs. Thus, vendors in the market get the advantage to compete based on prices. Moreover, due to lesser power consumptions, users prefer buying devices integrated with the next-generation memory technologies as their expenses also get reduced. In addition, next-generation memory technologies have the unique feature of a faster wake-up time. They also eliminate the need for data saving and restoring, unlike other flash memories. This gives next-generation memory technologies an additional benefit over other RAMs, along with the advantage of lower power consumption. Next-generation memory technologies help in the automatic update of systems, especially in wireless applications. All these factors attract device manufacturers and end-users, which will drive the adoption of these technologies during the forecast period.

Further, the report states that one challenges in market is cyclical nature of semiconductor industry. The cyclical nature of the semiconductor equipment industry affects operating results of equipment vendors due to severe downturns. The equipment manufacturers face risks such as overcapacity, low demand, and high price competition. Changes in customer requirements due to new manufacturing capacity and advances in technology affect equipment manufacturers considerably. Semiconductor manufacturing equipment vendors are largely affected by their capital expenditure. Device manufacturers reduce their capital expenditure and demand for semiconductor manufacturing equipment during the overcapacity period. During the cyclical period, there is a reduction in purchases, delay in delivery dates, and order cancellations by customers. This, in turn, results in reduction of net sales, backlogs, delays in revenue recognition, and excess inventory for the vendors, which poses a major threat to vendors’ operations. In addition, the high price competition due to their low demand in the market affects their gross margins.

Global Next Generation Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

key players in the global next generation memory market: Cypress Semiconductor, Fujitsu, Intel, IBM, Micron Technology, ROHM Semiconductor, Samsung Electronics, Texas Instruments, and Toshiba.

Other Prominent Vendors in the market are: Adesto Technologies, Crossbar, and Everspin Technologies.

Market driver

• Growing demand for FeRAM in automotive applications.
• For a full, detailed list, view our report

Market challenge

• Cyclical nature of consumer electronics industry.
• For a full, detailed list, view our report

Market trend

• Growing emergence of new FeRAM design using CMOS processes.
• For a full, detailed list, view our report

Key questions answered in this report

• What will the market size be in 2021 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?
• What are the market opportunities and threats faced by the key vendors?
• What are the strengths and weaknesses of the key vendors?

Spanning over 70 pages and 37 Exhibits “Global Next Generation Memory Market 2017 - 2021” report covers Executive summary, Scope of the report, Market research methodology, Introduction, Market landscape, Emerging memory technologies, Supply chain, Market segmentation by product, Market segmentation by application, Geographical segmentation, Decision framework, Drivers and challenges, Market trends, Vendor landscape, Key vendor analysis, Appendix.

For more information Visit at: http://mrr.cm/UcB

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